APTGT100A60TG APTGT100A60TG ? rev 1 june, 2006 www.microsemi . com 1 - 5 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followed . see application note apt0502 on www.microsemi.com vbus q1 g1 e1 out nt c2 0/vbu s g2 e2 nt c1 q2 out out ntc2 vbus e1 g2 e2 ntc1 0/vbus g2 e2 g1 s ymbol parameter ma x ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 150 i c continuous collector current t c = 80c 100 i cm pulsed collector current t c = 25c 200 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 340 w rbsoa reverse bias safe operating area t j = 150c 200a @ 550v v ces = 600v i c = 100a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? high level of integration ? internal thermistor for temperature monitoring benefits ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant phase leg trench + field stop igbt ? p owe r m odule
APTGT100A60TG APTGT100A60TG ? rev 1 june, 2006 www.microsemi . com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 100a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 1.5 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 6100 c oes output capacitance 390 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 190 pf t d(on) turn-on delay time 115 t r rise time 45 t d(off) turn-off delay time 225 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 100a r g = 3.3 ? 55 ns t d(on) turn-on delay time 130 t r rise time 50 t d(off) turn-off delay time 300 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 100a r g = 3.3 ? 70 ns t j = 25c 0.4 e on turn on energy t j = 150c 0.875 mj t j = 25c 2.5 e off turn off energy v ge = 15v v bus = 300v i c = 100a r g = 3.3 ? t j = 150c 3.5 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 150c 500 a i f dc forward current tc = 80c 100 a t j = 25c 1.6 2 v f diode forward voltage i f = 100a v ge = 0v t j = 150c 1.5 v t j = 25c 125 t rr reverse recovery time t j = 150c 220 ns t j = 25c 4.7 q rr reverse recovery charge t j = 150c 9.9 c t j = 25c 1.1 e r reverse recovery energy i f = 100a v r = 300v di/dt =2000a/s t j = 150c 2.4 mj
APTGT100A60TG APTGT100A60TG ? rev 1 june, 2006 www.microsemi . com 3 - 5 temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.44 r thjc junction to case thermal resistance diode 0.77 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g sp4 package outline (dimensions in mm) all dimensions marked " * " are tolerenced as : see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGT100A60TG APTGT100A60TG ? rev 1 june, 2006 www.microsemi . com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 175 200 00.511.522.53 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 25 50 75 100 125 150 175 200 0 0.5 1 1.5 2 2.5 3 3.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 175 200 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 175 200 i c (a) e (mj) v ce = 300v v ge = 15v r g = 3.3 ? t j = 150c eon eon eoff er 0 2 4 6 8 0 5 10 15 20 25 30 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 100a t j = 150c switching energy losses vs gate resistanc e reverse bias safe operating area 0 50 100 150 200 250 0 100 200 300 400 500 600 700 v ce (v) i f (a) v ge =15v t j =150c r g =3.3 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt
APTGT100A60TG APTGT100A60TG ? rev 1 june, 2006 www.microsemi . com 5 - 5 forw ard characteristic of diode t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 175 200 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching zcs zvs 0 20 40 60 80 100 120 0 25 50 75 100 125 150 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =3.3 ? t j =150c t c =85c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode m icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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